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| e PTB 20145 9 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20145 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 9 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 9 Watts, 915-960 MHz Class AB Characteristics 50% Min Collector Efficiency at 9 Watts Tested to solderability standards: - IEC-68-2-54 - ANSI/J Std-002-A Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel Typical Output Power vs. Input Power 12 10 8 6 4 2 0 0.00 Output Power (Watts) 20 LO TC O 14 DE 5 VCC = 25V ICQ = 50 mA f = 960 MHz 0.25 0.50 0.75 1.00 1.25 Input Power (Watts) Package 20208 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) 1 9/28/98 TSTG RJC Symbol VCER VCBO VEBO IC PD Value 55 60 4.0 2.6 33 0.19 -40 to +150 5.3 Unit Vdc Vdc Vdc Adc Watts W/C C C/W PTB 20145 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 50 mA VBE = 0 V, IC = 50 mA IC = 0 A, IE = 250 mA VCE = 5 V, IC = 1 A Symbol V(BR)CEO V(BR)CES V(BR)EBO hFE Min 24 65 3.5 20 Typ 30 70 5 50 Max -- -- -- 120 Units Volts Volts Volts -- RF Specifications (100% Tested) Characteristic Gain (VCC = 25 Vdc, Pout = 9 W, ICQ = 50 mA, f = 960 MHz) Collector Efficiency (VCC = 25 Vdc, Pout = 9 W, ICQ = 50 mA, f = 960 MHz) Load Mismatch Tolerance (VCC = 25 Vdc, Pout = 9 W, ICQ = 50 mA, f = 960 MHz--all phase angles at frequency of test) Symbol Gpe C Min 9 50 -- Typ 10 -- -- Max -- -- 30:1 Units dB % -- Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 25 Vdc, Pout = 9 W, ICQ = 50 mA) Z Source Z Load Frequency MHz 915 937 960 R 2.2 2.2 2.1 Z Source jX -2.5 -2.4 -2.2 R 3.4 3.5 3.7 Z Load jX 7.1 7.9 8.6 2 e Typical Performance Gain & Efficiency vs. Frequency (as measured in a broadband circuit) 11 Gain (dB) 10 70 60 Efficiency (%) 50 40 30 20 960 Efficiency (%) 80 PTB 20145 Gain (dB) 9 8 7 6 5 915 Vcc = 25 V ICQ = 50 mA POUT = 9 W 930 945 Frequency (MHz) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) Ericsson Components AB 1995 EUS/KR 1301-PTB 20145 Uen Rev. D 09-28-98 3 |
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